Full-band atomistic study of source-to-drain tunneling in Si nanowire transistors
نویسندگان
چکیده
Source-to-drain tunneling is investigated for Si triple-gate nanowire transistors. The full-band quantum transport problem is solved in an atomistic basis using the nearestneighbor sp3d5s∗ tight-binding method. It is self-consistently coupled to the threedimensional calculation of the electrostatic potential in the device using the finite element method. This procedure is applied to the computation of Id −Vgs transfer characteristics of transistors with different channel orientations such as [100], [110], [111], and [112] for gate lengths ranging from 4 nm to 13 nm. The subthreshold swing S is then extracted from the results to determine the scaling limit of nanowire transistors.
منابع مشابه
Atomistic Full-Band Simulations of Si Nanowire Transistors: Effects of Electron-Phonon Scattering
An atomistic full-band quantum transport simulator has been developed to study threedimensional Si nanowire field-effect transistors (FETs) in the presence of electron-phonon scattering. The Non-equilibrium Green’s Function (NEGF) formalism is solved in a nearest-neighbor sp3d5s∗ tight-binding basis. The scattering self-energies are derived in the self-consistent Born approximation to inelastic...
متن کاملPerformance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملEngineering Nanowire n-MOSFETs at L-g < 8 nm
As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L g) are scaled to lengths shorter than L g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be eng...
متن کاملSimulation of Nanowire Tunneling Transistors: From the Wentzel-Kramers-Brillouin Approximation to Full-Band Phonon-Assisted Tunneling
Nanowire band-to-band tunneling field-effect transistors ͑TFETs͒ are simulated using the Wentzel– Kramers–Brillouin ͑WKB͒ approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling ͑PAT͒. It is found that the WKB approximation properly works if one single imaginary path connecting the valence band ͑VB͒ and the conduction band ͑CB͒ dominates the tunne...
متن کاملBallistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2
Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...
متن کامل